Thin film transistor and manufacturing method of the same
AssigneeNEC LCD Technologies, Ltd.
InventorHiroshi TANABE
Life of this patent
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Abstract
To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon.
Claims12
A thin film transistor, comprising a light-shielding film formed on an insulating substrate, an insulating film formed on the light-shielding film, a semiconductor film formed on the insulating film, and a gate insulating film formed on the semiconductor film, wherein each layer of a laminate configured with a plurality of layers including the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously, wherein
- the each layer of the laminate is made of silicon or a material containing silicon.
Dependencies are inferred from the claim text.