Transparent insulating film, method for producing the same, and sputtering target
AssigneeSony Corporation
InventorsShina Kirita, Toshitaka Kawashima
Life of this patent
Estimating the term…
Abstract
A method for producing a transparent insulating film includes a step of forming a transparent insulating film on a substrate by sputtering using a zinc-aluminum alloy target containing 50% to 90% by weight zinc and 10% to 50% byt weight aluminum in a mixed gas atmosphere of an inert gas and oxygen gas.
Claims7
A method for producing a transparent insulating film, comprising forming a transparent insulating film on a substrate by sputtering using a zinc-aluminum alloy target containing 50% to 90% by weight zinc and 10% to 50% by weight aluminum in a mixed gas atmosphere of an inert gas and oxygen gas.
A transparent insulating film formed on a substrate by sputtering using a zinc-aluminum alloys target containing 50% to 90% by weight zinc and 10% to 50% by weight aluminum in a mixed gas atmosphere of an inert gas and oxygen gas.
A sputtering target for forming a transparent insulating film on a substrate by reactive sputtering in a mixed gas atmosphere of an inert gas and oxygen gas, the sputtering target comprising a zinc-aluminum alloy containing 50% to 90% by weight zinc and 10% to 50% by weight aluminum.
Dependencies are inferred from the claim text.