Systems for plasma enhanced chemical vapor deposition and bevel edge etching

An apparatus for processing multiple substrates, comprising:

• a loadlock chamber;
• a transfer chamber coupled to the loadlock chamber;
• one or more twin process chambers adapted for implementing deposition processes, wherein the one or more twin process chambers are coupled to the transfer chamber;
• and
• a substrate edge processing chamber coupled to the transfer chamber, the substrate edge processing chamber comprising:
• a substrate support having a substrate support surface;
• a plasma generator configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface;
• and
• a gas delivery assembly coupled to a gas source, wherein the gas delivery assembly is configured to generate a radial gas flow over the substrate support surface, wherein the radial gas flow travels from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.