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US 2008/0305648 A1Published application
Method for forming inorganic silazane-based dielectric film
AssigneeASM Japan K.K.
InventorsAtsuki FUKAZAWA, Nobuo MATSUKI, Jeongseok HA
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Abstract
A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.
Claims19
A method of forming a dielectric film, comprising the steps of:
- introducing a gas constituted by Si H, N and optionally C into a reaction chamber where an object is placed;
- controlling a temperature of the object at −50° C. to 50° C.;
- and
- depositing by plasma reaction an inorganic silazane-based film constituted by Si, N, and H containing inorganic silazane bonds.
1 more element
Dependencies are inferred from the claim text.