Manufacturing method of a semiconductor device and substrate processing apparatus

A substrate processing apparatus comprising:

• a processing chamber in which a substrate is processed;
• a material gas supply opening through which a material gas for forming a film containing ruthenium into the processing chamber is supplied;
• a cleaning gas supply opening through which a cleaning gas whose molecule has a fluorine atom or a chlorine atom into the processing chamber is supplied;
• and
• a controller that performs a control so as to clean an inside of the processing chamber by executing, alternately plural times, removing deposits containing ruthenium deposited in the processing chamber in forming the film by supplying the cleaning gas into the processing chamber and exposing surfaces of the deposits by removing a by-product generated so as to cover the surfaces of the deposits in removing the deposits.