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AssigneeToyota Electron Limited
InventorsEiichi NISHIMURA, Takamichi Kikuchi
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A substrate processing apparatus is provided to enable to efficiently remove an oxide layer and an organic material layer. A third process unit (36) of a substrate processing apparatus (10) includes a box-shaped process vessel (chamber) (50), a nitrogen gas supply system (190) and an ozone gas supply system (191). The ozone gas supply system (191) includes an ozone gas supply unit (195) and an ozone gas supply pipe (196) connected to the ozone gas supply unit (195). The ozone gas supply pipe (196) has an ozone gas supply hole (197) having an opening arranged opposite to a wafer (W). The ozone gas supply unit (195) supplies an ozone (O3) gas into the chamber (50) through the ozone gas supply hole (197) via the ozone gas supply pipe (196).
A substrate processing method for performing processing on a substrate having on a surface thereof an organic material layer covered with an oxide layer, the substrate processing method comprising:
A substrate processing method for performing processing on a substrate having on a surface thereof an organic material layer covered with an oxide layer, the substrate processing method comprising:
Dependencies are inferred from the claim text.