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US 2008/0305609 A1Published application
Method for forming a seamless shallow trench isolation
OwnerHui-Shen Shihinventor
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Abstract
A method for fabricating a seamless shallow trench isolation includes providing a semiconductor substrate having at least a shallow trench that is filled by a dielectric layer with a seam, forming a dielectric layer filling the shallow trench with a seam, forming at least one healing layer on the dielectric layer, and performing a low-temperature steam annealing process to eliminate the seam.
Claims18
A method for fabricating a seamless shallow trench isolation (STI) comprising steps of:
- providing a semiconductor substrate with a shallow trench being filled by a dielectric layer with a seam;
- forming at least one healing layer on the silicon oxide layer;
- and
- performing a low-temperature steam annealing process to eliminate the seam.
1 more element
Dependencies are inferred from the claim text.