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US 2008/0305575 A1Published application
Thin film transistor having oxide semiconductor layer and manufacturing method thereof
AssigneeCasio Computer Co., Ltd.
InventorHiromitsu Ishii
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Abstract
A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.
Claims19
A method of manufacturing a thin film transistor, comprising:
- continuously forming a semiconductor thin film forming film including zinc oxide and a protection film forming film;
- forming a protection film by etching the protection film forming film;
- forming a semiconductor thin film having a substantially same plan-view shape as the protection film, by etching the semiconductor thin film forming film by using the protection film as a mask;
- forming a gate insulating film which covers the protection film;
- and
- forming a gate electrode on the gate insulating film.
3 more elements
Dependencies are inferred from the claim text.