Photovoltaically Active Semiconductor Material and Photovoltaic Cell

Abstract

The invention relates to a photovoltaically active semiconductor material and a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material contains a crystal lattice composed of zinc telluride and, in the zinc telluride crystal lattice, ZnTe is substituted by—0.01 to 10 mol % CoTe, —0 to 10 mol % Cu2Te, Cu3Te or CuTe and —0 to 30 mol % of at least one compound selected from the group MgTe and MnTe, and wherein, in the zinc telluride crystal lattice Te is substituted by—0.1 to 30 mol % oxygen. The photovoltaic cell furthermore has a rear contact composed of a rear contact material that forms a metal telluride with tellurium.

Dependencies are inferred from the claim text.