Monolayer type photoconductor and image forming device

Abstract

Provided is a monolayer type photoconductor superior in sensitivity characteristics that allows reliable production by easy confirmation of the sensitivity characteristics, and an image forming device using such a monolayer type photoconductor. A monolayer type photoconductor including a base body and a single photo sensitive layer formed on the base body, the single photo sensitive layer containing a charge generating agent, a hole transfer agent, an electron transfer agent and a binding resin, wherein a maximum absorption wavelength (λmax) of the photo sensitive layer is set to a value of below 850 nm and an absorbance (A850) of light at a wavelength of 850 nm per unit thickness of the photo sensitive layer is set to a value of 0.05 μm−1 or less.

Dependencies are inferred from the claim text.