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US 2008/0305197 A1Published application
Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
AssigneeInternational Business Machines Corporation
InventorsMatthew E. Colburn, Kenneth Raymond Carter, Gary M. McClelland, Dirk Pfeiffer
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Abstract
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
Claims20
A system comprising a plurality of elements functioning in combination to fabricate a dual damascene structure, said structure being formed by coating a mold substrate with a photoresist;
- a. Patterning said photoresist with a pattern;
- b. Exposing said photoresist and pattern, and developing said pattern in said photoresist;
- c. Transferring said pattern in said photoresist into an upper surface of a mold substrate;
- d. Coating said upper surface of said mold substrate with a planarizing layer to form a planarized stack;
- e. Coating said planarized stack with a photoresist;
- f. Exposing said photoresist and developing the pattern in said photoresist;
- g. Transferring said pattern into said mold substrate.
4 more elements
Dependencies are inferred from the claim text.