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US 2008/0304529 A1Published application
Semiconductor laser device
AssigneeMitsubishi Electric Corporation
InventorKimio SHIGIHARA
Life of this patent
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Abstract
A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs. The Al composition ratios of the pair of AlGaAs cladding layers are 0.4 or less. The Al composition ratios are set such that the refractive indices of the pair of AlGaAs cladding layers do not exceed those of the pair of InGaAsP guiding layers.
Claims5
1-4. (canceled)
A semiconductor laser device comprising:
- an active layer;
- a pair of guiding layers sandwiching said active layer therebetween;
- and
- a pair of cladding layers sandwiching said active layer and said pair of guiding layers therebetween, wherein
- said pair of guiding layers are InGaAsP lattice-matched to GaAs,
- said pair of cladding layers are InGaAsP, and
- As composition ratio of each InGaAsP cladding layer does not exceed As composition ratio of the closer one of said pair of InGaAsP guiding layers.
4 more elements
Dependencies are inferred from the claim text.