Synchronous semiconductor memory device having on-die termination circuit and on-die termination method
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Jin Lee, Kye-Hyun Kyung, Chang-Sik Yoo
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AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Jin Lee, Kye-Hyun Kyung, Chang-Sik Yoo
Estimating the term…
A synchronous semiconductor memory device having an on-die termination (ODT) circuit, and an ODT method, satisfy ODT DC and AC parameter specifications and perform an adaptive impedance matching through an external or internal control, by executing an ODT operation synchronized to an external clock. The synchronous semiconductor memory device having a data output circuit for performing a data output operation synchronously to the external clock includes the ODT circuit for generating ODT up and down signals having the same timing as data output up and down signals for the data output operation, to perform the ODT operation.
A synchronous semiconductor memory device comprising:
The device as claimed in 1, wherein the data output circuit comprises:
The device as claimed in 1, wherein the ODT circuit comprises an ODT synchronous buffer adapted to receive an ODT command applied in response to a buffered clock signal generated by buffering the external clock, and outputting a synchronous ODT command in response to a first clock signal delay-locked to the external clock.
The device as claimed in 3, wherein the ODT circuit further comprises:
The device as claimed in 3, further comprising a delay-locked loop adapted to generate the first clock signal delay-locked to the external clock.
The device as claimed in 3, wherein the phase difference between the first and second clock signals is based on a half cycle of the external clock.
The device as claimed in 3, wherein the ODT synchronous buffer comprises:
The device as claimed in 1, wherein the ODT circuit comprises an ODT driver adapted to perform an ODT driving operation synchronized to the external clock, by controlling an ON operation and an OFF operation of a pull-up resistance and a pull-down resistance in response to a state of the ODT up and down signals.
The device as claimed in 8, wherein the ODT driver comprises:
The device as claimed in 9, wherein the plurality of unit drivers comprise:
The device as claimed in 1, wherein the ODT circuit comprises an ODT controller adapted to output an up enable signal and a down enable signal in response to an external or internal control signal.
The device as claimed in 11, wherein said ODT controller includes at least one fuse for generating an internal control signal.
The device as claimed in 11, wherein when said ODT controller outputs the up and down enable signals in response to an external control signal, a mode register set code is externally received.
Dependencies are inferred from the claim text.