Semiconductor device and a method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate including a supporting substrate, an insulating layer formed over the supporting substrate and a first and a second silicon layer formed over the insulating film;
• an n channel conductivity type field effect transistor having a channel forming region formed in the first silicon layer,
• wherein the n channel conductivity type field effect transistor has a source region and a drain region formed in the semiconductor substrate such that the channel forming region is formed between the source region and the drain region;
• a p channel conductivity type field effect transistor having a channel forming region formed in a second region on the main surface, which second region is different from the first region,
• wherein the p channel conductivity type field effect transistor has a source region and a drain region formed in the second silicon layer;
• and
• a film for self align contact including nitride, being formed over the n channel conductivity type field effect transistor and covering a gate electrode of the n channel conductivity type field effect transistor,
• wherein a gate length of the n channel conductivity type field effect transistor is less than 0.1 μm,
• wherein a gate length of the p channel conductivity type field effect transistor is less than 0.1 μm,
• wherein the channel forming region of the n channel conductivity type field effect transistor is comprised of a silicon layer,
• wherein the channel forming region of the p channel conductivity type field effect transistor is comprised of a silicon layer,
• wherein the film for self align contact generates a stress in the direction of flow of a drain current in the channel forming region of the n channel conductivity type field effect transistor, and
• wherein an interatomic distance of silicon in the direction of flow of a drain current in the channel forming region of the n channel conductivity type field effect transistor is greater than an interatomic distance of silicon in the direction of flow of a drain current in the channel forming region of the p channel conductivity type field effect transistor.

A manufacturing method of a semiconductor device having an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the one main surface of the semiconductor substrate which region is different from the first region,

• the method comprising the steps of:
• forming the n channel conductivity type field effect transistor and the p channel conductivity type field effect transistor;
• forming, over the first region and the second region on the one main surface of the semiconductor substrate, an insulating film for generating a compressive stress in the channel formation region of the p channel conductivity type field effect transistor;
• and
• selectively introducing an impurity to the insulating film over the second region on the one main surface of the semiconductor substrate, thereby relaxing a compressive stress generated in the channel formation region of the n channel conductivity type field effect transistor.

A manufacturing method of a semiconductor device having an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region different from the first region on the one main surface of the semiconductor substrate,

• the method comprising the steps of:
• forming the n channel conductivity type field effect transistor and the p channel conductivity type field effect transistor;
• forming, over the first region and second region on the one main surface of the semiconductor substrate, an insulating film for generating a tensile stress in the channel formation region of the n channel conductivity type field effect transistor;
• and
• selectively introducing an impurity to the insulating film over the first region on the one main surface of the semiconductor substrate, thereby relaxing a tensile stress generated in the channel formation region of the p channel conductivity type field effect transistor.