Image Sensor and Method for Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorJI HO HONG
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Abstract
An image sensor and a fabricating method thereof are provided. A pixel area and a peripheral circuit area can have a step difference on a semiconductor substrate. A Complimentary Metal Oxide Semiconductor (CMOS) circuit can be provided on the pixel area, and an interlayer dielectric layer can be provided on the pixel area and the peripheral circuit area. A photodiode can be provided on the interlayer dielectric layer of the pixel area such that the top of the photodiode, or an intrinsic layer of the photodiode, is about even with the top of the interlayer dielectric layer of the peripheral circuit area.
Claims19
An image sensor, comprising:
- a semiconductor substrate having a pixel area and a peripheral circuit area, wherein an upper surface of the semiconductor substrate of the peripheral circuit area is higher than an upper surface of the semiconductor substrate of the pixel area;
- a Complimentary Metal Oxide Semiconductor (CMOS) circuit on the semiconductor substrate in the pixel area;
- an interlayer dielectric layer on the semiconductor substrate in the pixel area and the peripheral circuit area;
- and
- a photodiode on the interlayer dielectric layer of the pixel area,
- wherein the photodiode comprises an intrinsic layer, and wherein an upper surface of the photodiode or an upper surface of the intrinsic layer of the photodiode is about even with an upper surface of the interlayer dielectric layer of the peripheral circuit area.
A method for manufacturing an image sensor, comprising:
- forming a pixel area and a peripheral circuit area on a semiconductor substrate, wherein an upper surface of the semiconductor substrate of the peripheral circuit area is higher than an upper surface of the semiconductor substrate of the pixel area;
- forming a transistor circuit on the pixel area;
- forming an interlayer dielectric layer on the pixel area and the peripheral circuit area;
- and
- forming a photodiode on the interlayer dielectric layer of the pixel area,
- wherein an upper surface of the photodiode is about even with an upper surface of the interlayer dielectric layer of the peripheral circuit area.
Dependencies are inferred from the claim text.