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US 2008/0303070 A1Published application
Preventing cavitation in high aspect ratio dielectric regions of semiconductor device
AssigneeInternational Business Machines Corporation
InventorsPaul D. Agnello, Rajeev Malik, K. Paul Muller
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Abstract
Methods for preventing cavitation in high aspect ratio dielectric regions in a semiconductor device, and the device so formed, are disclosed. The invention includes depositing a first dielectric in the high aspect ratio dielectric region between a pair of structures, and then removing the first dielectric to form a bearing surface adjacent each structure. The bearing surface prevents cavitation of the interlayer dielectric that subsequently fills the high aspect ratio region.
Claims4
A semiconductor device comprising:
- a first and a second gate structure, each gate structure including a main body and a spacer;
- a high aspect ratio region, filled with a dielectric, between the first and second gate structure;
- and
- a bearing surface adjacent each gate structure within the high aspect ratio region for preventing cavitation of the dielectric in the high aspect ratio region.
1 more element
Dependencies are inferred from the claim text.