Field-effect semiconductor device and method of fabrication

A method of making a field-effect semiconductor device, which comprises:

• (a) providing a first semiconductor layer of a first semiconducting material, the semiconductor layer having a major surface comprised of a pair of spaced-apart parts with a midpart therebetween;
• (b) forming a baffle on the midpart of the surface of the first semiconductor layer;
• (c) depositing a second semiconducting material on the major surface of the first semiconductor layer thereby conjointly creating a second semiconductor layer and a discontinuous growth layer thereon, the second semiconductor layer being grown continuously on the pair of spaced-apart parts of the major surface of the first semiconductor layer for creating a two-dimensional carrier gas layer in the first semiconductor layer, the discontinuous growth layer being grown discontinuously on the midpart of the major surface of the first semiconductor layer via the baffle for normally creating a hiatus in the two-dimensional carrier gas layer in the first semiconductor layer;
• (d) creating a source electrode which is electrically coupled to the two-dimensional carrier gas layer in the first semiconductor layer;
• (e) creating a drain electrode which is electrically coupled to the two-dimensional carrier gas layer in the first semiconductor layer, the drain electrode being spaced from the source electrode;
• (f) creating a gate electrode on the discontinuous growth layer for control of conduction between the source electrode and the drain electrode.