Semiconductor light emitting device
AssigneeKabushiki Kaisha Toshiba
InventorHideto FURUYAMA
Life of this patent
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Abstract
A semiconductor light emitting device includes a silicon substrate, a p-type semiconductor layer provided on the silicon substrate, a n-type semiconductor layer provided on the silicon substrate, the n-type semiconductor layer adjoining the p-type semiconductor layer, and a light emitting section formed at a p-n homojunction between the p-type semiconductor layer and the n-type semiconductor layer. The p-n homojunction is substantially perpendicular to a major surface of the silicon substrate. The p-n homojunction is corrugated with a period matched with an integer multiple of an emission wavelength at the light emitting section.
Claims18
A semiconductor light emitting device comprising:
- a silicon substrate;
- a p-type semiconductor layer provided on the silicon substrate;
- an n-type semiconductor layer provided on the silicon substrate, the n-type semiconductor layer adjoining the p-type semiconductor layer;
- and
- a light emitting section formed at a p-n homojunction between the p-type semiconductor layer and the n-type semiconductor layer, the p-n homojunction being substantially perpendicular to a surface of the silicon substrate, and the p-n homojunction being corrugated with a period matched with an integer multiple of an emission wavelength at the light emitting section.
A semiconductor light emitting device comprising:
- a silicon substrate;
- a p-type semiconductor layer provided on the silicon substrate;
- an n-type semiconductor layer provided on the silicon substrate, the n-type semiconductor layer adjoining the p-type semiconductor layer;
- and
- a light emitting section formed at a p-n homojunction between the p-type semiconductor layer and the n-type semiconductor layer, the p-n homojunction being substantially perpendicular to a surface of the silicon substrate, and the p-n homojunction having a width that is periodically varied with a period matched with an integer multiple of half an emission wavelength at the light emitting section.
Dependencies are inferred from the claim text.