Compound semiconductor film, light emitting film, and manufacturing method thereof
AssigneeCanon Kabushiki Kaisha
InventorsTomoyuki Oike, Tatsuya Iwasaki
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Abstract
Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.
Claims15
A compound semiconductor film having a composition represented by a Cu2—Zn—IV—S4 type, wherein the IV is at least one of Ge and Si.
A compound semiconductor film manufacturing method, comprising the step of depositing a compound semiconductor film on a base,:
- the compound semiconductor film being a semiconductor represented by a Cu2—Zn—IV—S4 type where the IV is at least one of Ge and Si,
- wherein the depositing step includes at least one of the steps of forming the compound semiconductor film at a temperature which is equal to or higher than 400° C. and lower than 600° C. and performing heat treatment on the compound semiconductor film at said temperature.
A light emitting film manufacturing method, comprising laminating at least a light emitting material and a compound semiconductor film on a substrate in the stated order, the compound semiconductor film being a semiconductor represented by a Cu2—Zn—IV—S4 type where the IV is one of Ge and Si,
- wherein upon the lamination of the light emitting material and the compound semiconductor film, at least one of a temperature of the substrate and a heat treatment temperature is held at a temperature which is equal to or higher than 400° C. and lower than 600° C.
Dependencies are inferred from the claim text.