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US 2008/0303033 A1Published application
Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
AssigneeCree, Inc.
InventorGeorge R. Brandes
Life of this patent
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Abstract
A method of forming an AlInGaN alloy-based electronic or optoelectronic device structure on a nitride substrate and subsequent removal of the substrate. An AlInGaN alloy-based electronic or optoelectronic device structure formed on a nitride substrate is freed from the substrate on which it was grown.
Claims41
A method of making an electronic or optoelectronic device structure, the method comprising:
- epitaxially growing one or more layers of an AlInGaN alloy on or over a nitride substrate to form a semiconductor device complex;
- and
- removing the substrate from the semiconductor device complex to form a resulting electronic or optoelectronic device structure,
- wherein the AlInGaN alloy and the nitride substrate comprise different materials and wherein the resulting electronic or optoelectronic device structure is devoid of the nitride substrate on which it was grown.
1 more element
An electronic or optoelectronic device structure formed by a method comprising:
- epitaxially growing one or more layers of an AlInGaN alloy on or over a nitride substrate to form a semiconductor device complex;
- and
- removing the substrate from the semiconductor device complex to form a resulting electronic or optoelectronic device structure,
- wherein the AlInGaN alloy and the nitride substrate comprise different materials and wherein the resulting electronic or optoelectronic device structure is devoid of the nitride substrate on which it was grown.
1 more element
A method of making an electronic or optoelectronic device structure, the method comprising:
- epitaxially growing one or more layers of an AlInGaN alloy on or over a lattice-matched substrate to form a semiconductor device complex;
- and
- removing the substrate from the semiconductor device complex to form a resulting electronic or optoelectronic device structure,
- wherein the resulting electronic or optoelectronic device structure is devoid of the substrate on which it was grown.
1 more element
Dependencies are inferred from the claim text.