Vertical Phase Change Memory Cell and Methods For Manufacturing Thereof
AssigneeNXP B.V.
InventorsLudovic Raymond Andre Goux, Dirk Johan Cecil Christiaan Marie Wouters, Judit Gloria Lisoni Reyes, Thomas Gille
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Abstract
The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.
Claims20
A phase-change memory element comprising:
- a bottom electrode,
- a first layer of a conductive material overlying the bottom electrode, a patterned layer of an electrically insulating material overlying the first conductive layer,
- phase-change material at least partially filling the volume in-between the pattern of the patterned layer and in ohmic contact with the first conductive layer,
- a second layer of a conductive material overlying the patterned layer and in ohmic contact with the phase-change material, and
- a top electrode.
A method for manufacturing a phase-change memory element, comprising:
- forming a bottom electrode on a substrate,
- forming a first layer of conductive material over the bottom electrode,
- forming a first layer of dielectric material over the first conductive layer,
- forming at least one opening in the first dielectric layer to expose the underlying first conductive layer,
- at least partially filling the at least one opening with phase-change material,
- forming a second layer of conductive material overlying the first dielectric layer and contacting the phase-change material layer in the at least one opening, and
- forming a top electrode on the second conductive layer.
Dependencies are inferred from the claim text.