Semiconductor device and manufacturing method therefor

A method of manufacturing a semiconductor device comprising:

• forming a gate insulation film on a semiconductor substrate;
• forming a first gate electrode and a second gate electrode on the gate insulation film;
• forming a mask material so as to expose an upper surface of the second gate electrode while keeping the first gate electrode covered;
• forming a silicidation restricting layer inside the second gate electrode, the silicidation restricting layer being less easily silicided than a material of the first and the second gate electrodes;
• removing the mask material;
• depositing a metal film on the first gate electrode and the second gate electrode;
• and
• siliciding the whole of the first gate electrode and an upper part above the silicidation restricting layer in the second gate electrode.