Method of manufacturing semiconductor memory device
AssigneeDongbu HiTek Co., Ltd.
InventorYoung-Sun Ko
Life of this patent
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Abstract
A method of manufacturing a semiconductor memory device includes forming a device separation film on a semiconductor substrate using a mask pattern for defining an entire source line region as an active region to separate a device separation region from an active region; forming a stack gate structure on the semiconductor substrate; forming a common source line by implanting impurity ions into the semiconductor substrate in the source line region; and performing an impurity ion implantation process on the semiconductor substrate to form a drain region.
Claims18
A method of manufacturing a semiconductor memory device comprising:
- forming a device separation film on a semiconductor substrate using a mask pattern defining a source line region as an active region to separate a device separation region from the active region;
- and then
- forming a stack gate structure including a floating gate and a control gate on the semiconductor substrate;
- and then
- forming a common source line by implanting impurity ions into the semiconductor substrate in the source line region;
- and then
- forming a drain region on the semiconductor substrate by performing an impurity ion implantation process on the semiconductor substrate.
A method of manufacturing a semiconductor memory device comprising:
- separating a device separation region from an active region of the semiconductor substrate using a lattice-shaped mask pattern for defining a source line region as the active region;
- and then
- forming a device isolation film on the semiconductor substrate;
- forming a gate structure on the semiconductor substrate;
- and then
- forming a photosensitive film on the semiconductor substrate including the gate structure and patterning the photosensitive film exposing the source line region;
- and then
- forming a common source line in the semiconductor substrate adjacent a sidewall of the gate structure by performing a self-aligned source process.
The method of claim 8, wherein forming the common source line comprises implanting impurity ions into the common source line region using the patterned photosensitive film as an ion implantation mask.
Dependencies are inferred from the claim text.