Pattern forming method, pattern formed thereby, mold, processing apparatus, and processing method

A pattern forming method comprising:

• a step of forming a pattern of a resist on a transfer layer provided on a thin film, provided on a surface of a base material of a first material, of a second material;
• a step of forming a first reverse layer of a third material on the pattern of the resist;
• a step of forming a first reverse pattern, of the first reverse layer complementary to the pattern of the resist by removing the resist after removing the reverse layer to expose a surface of the resist;
• a step of forming a second reverse pattern comprising the transfer layer and the first reverse pattern formed on the transfer layer by etching the transfer layer through the first reverse layer as a mask;
• a step of forming a second reverse layer of the third material on the second pattern;
• a step of forming a third reverse pattern, of a second reverse layer, complementary to the first reverse pattern by removing the transfer layer after removing the second reverse layer and the first reverse pattern to expose a surface of the transfer layer;
• a step of forming a hard mask layer comprising the thin film, on which the third reverse pattern is formed, by etching the thin film through the third reverse pattern of as a mask;
• and
• a step of etching the base material through, as a mask, the hard mask layer on which the third reverse pattern remains or the hard mask layer on which the third reverse pattern has been removed.