Method for etching using a multi-layer mask
AssigneeTokyo Electron Limited
InventorHarlan STAMPER
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AssigneeTokyo Electron Limited
InventorHarlan STAMPER
Estimating the term…
A method of dry developing a multi-layer mask on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying a second mask layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the second mask layer using a dry plasma etching process, wherein the dry plasma etching process comprises introducing a process gas, forming plasma from the process gas, and exposing the substrate to the plasma. During the pattern transfer, the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer.
A method of dry developing a multi-layer mask on a substrate, comprising:
A computer readable medium containing program instructions for execution on a computer system, which when executed by the computer system, cause the computer system to perform the steps of:
A method of dry developing a multi-layer mask on a substrate, comprising:
Dependencies are inferred from the claim text.