Chamber idle process for improved repeatability of films

A method of processing substrates, comprising:

• introducing a first flow of a precursor vaporized from a liquid source into a chamber and depositing a first film on a first substrate in the chamber;
• terminating the first flow of the precursor into the chamber;
• removing the first substrate from the chamber;
• and
• at a predetermined time indicating a chamber idle period after terminating the first flow of the precursor into the chamber and after the first substrate is removed from the chamber, exposing one or more interior surfaces of the chamber to a gas in the presence or absence of a plasma for a first period of time without a substrate being processed in the chamber, wherein no substrates are processed in the chamber between the removing the first substrate and the exposing one or more interior surfaces of the chamber to the gas.

A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a chamber using a deposition method, wherein the software routine comprises instructions for:

• introducing a first flow of a precursor vaporized from a liquid source into a chamber and depositing a first film on a first substrate in the chamber;
• terminating the first flow of the precursor into the chamber;
• removing the first substrate from the chamber;
• and then
• introducing a second flow of the precursor into the chamber at a predetermined time indicating a chamber idle period after terminating the first flow of the precursor into the chamber, wherein no substrates are processed in the chamber between the removing the first substrate and the introducing the second flow of the precursor, and continuing the second flow of the precursor for a first period of time without a substrate being processed in the chamber.

A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a chamber using a deposition method, wherein the software routine comprises instructions for:

• introducing a first flow of a precursor into a chamber and depositing a first film on a first substrate in the chamber;
• terminating the first flow of the precursor into the chamber;
• removing the first substrate from the chamber;
• and
• at a predetermined time indicating a chamber idle period after terminating the first flow of the precursor into the chamber and after the first substrate is removed from the chamber, exposing one or more interior surfaces of the chamber to a gas in the presence or absence of a plasma for a first period of time without a substrate being processed in the chamber, wherein no substrates are processed in the chamber between the removing the first substrate and the exposing one or more interior surfaces of the chamber to a gas.