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US 2008/0291718 A1Published application
Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
AssigneeMicron Technology, Inc.
InventorJun Liu
Life of this patent
Estimating the term…
Abstract
A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first electrode; a resistance changing material, e.g. a phase change material, having a first surface coupled to a second surface of said resistivity interfacial layer, and a second electrode coupled to a second surface of said resistance changing material.
Claims27
A resistive memory device comprising:
- a first electrode;
- an interfacial adhesion heating layer having a first surface coupled to said first electrode;
- a resistance changing material having a first surface coupled to a second surface of said interfacial adhesion heating layer;
- and
- a second electrode coupled to a second surface of said resistance changing material.
2 more elements
A resistive memory device comprising:
- a first electrode;
- at least one dielectric material layer having an opening over said first electrode;
- an interfacial adhesion heating layer within said opening and in contact with said first electrode;
- a GST material layer within said opening and in contact with said interfacial adhesion heating layer;
- and
- a second electrode in contact with said GST material.
3 more elements
A resistive memory device comprising:
- a first electrode;
- an interfacial adhesion heating layer having a first surface in contact with said first electrode, said interfacial adhesion heating layer formed of at least one material selected from the group consisting of TaN, TiAlN, AlPdRe, Hfre5, TiNiSn, PBTe, Bi2Te3, and Al2O3, A-C, TiOxNy, TiAlx Oy, SiOxNy, and TiOx.
- a GST material having a first surface in contact with a second surface of said interfacial adhesion heating layer;
- and
- a second electrode in contact with a second surface of said GST material.
2 more elements
A method of forming a memory element, the method comprising:
- forming a first electrode;
- forming an interfacial adhesion heating layer having a first surface coupled to the first electrode;
- forming a resistance changing material layer having a first surface coupled to a second surface of the interfacial adhesion heating layer;
- and
- forming a second electrode coupled to a second surface of the resistance changing material layer.
2 more elements
Dependencies are inferred from the claim text.