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AssigneeAdvanced Analogic Technologies, Inc.
InventorsRichard K. Williams, Donald Ray Disney, Jun-Wei Chen, Wal Tien Chan, HyungSik Ryu
Estimating the term…
A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.
The isolation structure of claim 18 wherein the trench is filled with a dielectric material.
4-11. (canceled)
The isolation structure of claim 18, the walls of the annular trench being lined with a dielectric material, the annular trench containing a conductive material,
16-17. (canceled)
An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate not comprising an epitaxial layer, the structure comprising:
Dependencies are inferred from the claim text.