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US 2008/0290447 A1Published application
Semiconductor device and methods of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorTae-Woong Jeong
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Abstract
A method of making a semiconductor-oxide-nitride-oxide-semiconductor (SONOS) device by a process of growing Meta-stable poly silicon (MPS) regions is provided. Meta-stable poly silicon (MPS) regions are formed in the active region of a semiconductor substrate, dielectric materials are formed on the MPS regions, and control gates are formed on parts of the dielectric materials.
Claims10
A semiconductor device, comprising:
- shallow trench isolations (STI) formed in a semiconductor substrate in a manner so as to provide device isolation in an active region;
- particle-shaped meta-stable poly silicon (MPS) regions disposed on portions of the active region that are device isolated by the STIs;
- one or more dielectric materials disposed on the MPS regions;
- and
- control gates disposed on parts of the dielectric materials.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming meta-stable poly silicon (MPS) regions in an active region of a semiconductor substrate;
- forming dielectric materials on the MPS regions;
- and
- forming control gates on a least portions of the dielectric materials.
1 more element
Dependencies are inferred from the claim text.