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US 2008/0290441 A1Published application
Photodetector for backside-illuminated sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Hsuan Hsu, Dun-Nian Yaung, Ching-Chun Wang
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Abstract
A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.
Claims20
A backside-illuminated sensor comprising:
- a semiconductor substrate having a front surface and a back surface;
- and
- a plurality of pixels formed on the front surface of the semiconductor substrate, wherein at least one pixel comprises a photogate structure, the photogate structure having a gate including a reflective layer.
A back-side illuminated sensor, comprising:
- a substrate having a front surface and a back surface;
- means for sensing radiation incident on the back surface of the substrate;
- and
- means for reflecting radiation, the means for reflecting the radiation including a reflective layer formed on the front surface of the substrate.
1 more element
An image sensor comprising:
- a semiconductor substrate comprising a photodetector including a reflective layer, wherein the reflective layer is formed on the semiconductor substrate on a side of the semiconductor substrate opposite an incident radiation beam, wherein the incident radiation beam is to be detected by the photodetector.
Dependencies are inferred from the claim text.