Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, the method comprising:

• forming first and second device isolation structures in a semiconductor substrate to define an active region including a first active area and a second active area, wherein the second active area is formed as a portion of a gate, and the first active area includes material epitaxially grown on the semiconductor substrate between two neighboring gate regions as a seed layer, wherein a line width of the first active area is greater than a line width of the second active area;
• etching a portion of the device isolation structure overlapping the gate to form a recess;
• and
• forming the gate by filling the recess with conductive material.

A method of fabricating a semiconductor device having a fin gate, the method comprising:

• forming first and second trenches on a semiconductor substrate to define a protruding portion between the first and second trenches;
• etching a portion of the protruding portion to define first, second, and third recesses, the first recess being adjacent to the first trench, the second recess being adjacent to the second trench, the third recess being defined between the first and second recesses;
• and
• performing a selective epitaxial process on the semiconductor substrate to grow semiconductor material at the first, second, and third recesses to form a first active area.