Semiconductor device and method for manufacturing the same

A semiconductor device suitable for preventing a threshold voltage of a gate from decreasing due to a voltage of an adjacent storage node, the device comprising:

• a semiconductor substrate defining an active region and a device isolation region, the device isolation region defining the active region, the active region including a gate area and a storage node contact area;
• a device isolation structure formed in the semiconductor substrate to define the active region and having a shield layer within the device isolation structure;
• a gate formed in the gate area of the semiconductor substrate;
• a storage node contact plug electrically coupled to a doped region assigned to the gate;
• and
• a storage node electrically coupled to the storage node contact plug, the storage node being configured to cooperate with the gate and store information.