Semiconductor devices including implanted regions and protective layers

A transistor device comprising:

• a Group III-nitride semiconductor layer including source and drain regions;
• a SiN protective layer on the semiconductor layer;
• a distribution of implanted dopants within the source and drain regions of the semiconductor layer, wherein the distribution of implanted dopants has a peak concentration near an interface of the semiconductor layer and the protective layer;
• and
• source and drain ohmic contacts extending through the protective layer to contact the source and drain regions, respectively, of the semiconductor layer.

A semiconductor structure comprising:

• a semiconductor layer;
• a protective layer on the semiconductor layer, the protective layer having at least one window therein exposing a portion of the semiconductor layer;
• a distribution of implanted dopants within the semiconductor layer, wherein the distribution of implanted dopants has a peak concentration of 1×1018 cm−3 or greater near an interface of the semiconductor layer and the protective layer;
• and
• an ohmic contact extending through the window in protective layer to contact the semiconductor layer.