Compound semiconductor wafer, light emitting diode and manufacturing method thereof

A light emitting diode, comprising:

• a compound semiconductor crystal layer including an emission layer;
• and
• a conductive substrate bonded to the compound semiconductor crystal layer through a metallic layer,
• wherein the metallic layer comprises a first metallic layer formed on one principal surface of the compound semiconductor crystal layer, a second metallic layer formed on one principal surface of the conductive substrate, and a porous metallic microparticle layer formed between the first metallic layer and the second metallic layer, the porous metallic microparticle layer comprising metallic microparticles comprising an average diameter of 1 nm to 100 nm and bonded to each other.

A method of manufacturing a light emitting diode that comprises a compound semiconductor crystal layer including an emission layer and a conductive substrate bonded to the compound semiconductor crystal layer through a metallic layer, comprising:

• epitaxially growing the compound semiconductor crystal layer on a single crystal substrate;
• forming a first metallic layer on a surface of an uppermost layer of the compound semiconductor crystal layer;
• forming a second metallic layer on a surface of the conductive substrate;
• forming, on a surface of the first metallic layer and/or the second metallic layer, a metallic microparticle layer comprising metallic microparticles comprising an average diameter of 1 nm to 100 nm and bonded to each other;
• bonding the first metallic layer on the single crystal substrate to the second metallic layer on the conductive substrate through the metallic microparticle layer;
• and
• removing the single crystal substrate on the conductive substrate.