Deposition of ta- or nb-doped high-k films
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorChristian DUSSARRAT
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Abstract
Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.
Claims22
A method for depositing a high-k film on to one or more substrates comprising:
- a) introducing a first metal precursor into the reaction chamber, wherein the first metal precursor comprises a compound having the formula:
- M1(OR)4L1
- wherein M1 is selected from the group consisting of Ta and Nb, R is an alkyl group, and L1 has the formula, —O—(CR1, R2)n—X—(R3)(R4) or —NR0—(CR1R2)n—X—(R3)(R4), wherein R0 is a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms, R1 and R2 may each independently be a hydrogen atom, a methyl group, or an ethyl group, n is an integer ranging from 0 and 3, X is an O or N atom, R3 is a hydrogen atom, or an alkyl group having from 1 to 4 carbon atoms, and R4 is a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms, and wherein R0−4 may be the same or different from one another,
- a compound having the formula:
- M1(NR1R2)(NR3R4)(NR5R6)(NR7R8)(NR9R10)
- wherein M1 is selected from the group consisting of Ta and Nb, R0-10 may each independently be an alkyl group having from 1 to 6 carbon atoms, and wherein R0-10 may be the same or different from one another,
- a compound having the formula:
- M1(═NR0)(—NR1R2)(—NR3R4)(—NR5R6)
- wherein R0-6 may each independently be an alkyl group having from 1 to 6 carbon atoms, and wherein R0-6 may be the same or different from one another,
- a compound having the formula:
- M1(X)5, S(R1R2)
- wherein M1 is Ta or Nb, X is a halogen, and R1 and R2 may each independently be an alkyl group having 1 to 4 carbon atoms,
- or combinations thereof.
- b) introducing a second metal precursor into a reaction chamber, wherein the second metal precursor comprises hafnium or zirconium, and wherein the reaction chamber contains the one or more substrates;
- and
- c) vaporizing the first metal precursor and the second metal precursor to deposit the high-k film on to the one or more substrates.
The method of claim 9 wherein the oxidizing gas comprises oxygen, ozone, hydrogen peroxide, nitric oxide, nitrous oxide, or combinations thereof.
A precursor for depositing a high-k film comprising:
- a compound having the formula:
- M1(OR)4L
- wherein M1 is selected from the group consisting of Ta and Nb, R is an alkyl group, and L has the formula, O—(CR1R2))nX—(R3)(R4) or —NR0—(CR1R2)n—X—(R3)(R4), wherein R0 is a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms, R1 and R2 may each independently be a hydrogen atom, a methyl group, or an ethyl group, n is an integer ranging from 0 and 3, X is an O or N atom, R3 is a hydrogen atom, or an alkyl group having from 1 to 4 carbon atoms, and R4 is a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms and wherein R0-4 may be the same or different from one another,
- a compound having the formula:
- M1(NR1R2)(NR3R4)(NR5R6)(NR7R8)(NR9R10)
- wherein M1 is selected from the group consisting of Ta and Nb, R0-10 may each independently be an alkyl group having from 1 to 6 carbon atoms, and wherein R0-10 may be the same or different from one another,
- a compound having the formula:
- M1(═NR0)(—NR1R2)(—NR3R4)(—NR5R6)
- wherein R0-6 may each independently be an alkyl group having from 1 to 6 carbon atoms, and wherein R0-6 may be the same or different from one another,
- a compound having the formula:
- M1(X)5, S(R1R2)
- wherein M1 is Ta or Nb, X is a halogen, and R1 and R2 may each independently be an alkyl group having 1 to 4 carbon atoms,
- or combinations thereof.
Dependencies are inferred from the claim text.