Method for forming semiconductor fine-pitch pattern
AssigneeDongbu HiTek Co., Ltd.
InventorEun Soo JEONG
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Abstract
A method for forming a fine-pitch pattern on a semiconductor substrate is provided. The method includes patterning the semiconductor substrate to form a plurality of fine lines, forming a thermal oxide layer on the fine lines, polishing the thermal oxide layer to expose a top surface of the fine lines; etching the fine lines using the thermal oxide layer as a mask to expose first portions of the semiconductor substrate, etching a central bottom portion of the thermal oxide layer to expose second portions of the semiconductor substrate, and etching the semiconductor substrate using the etched thermal oxide layer as a mask.
Claims14
A method for forming a fine-pitch pattern on a semiconductor substrate, comprising:
- patterning the semiconductor substrate to form a plurality of fine lines;
- forming a thermal oxide layer on the fine lines;
- polishing the thermal oxide layer to expose a top surface of the fine lines;
- etching the fine lines using the thermal oxide layer as a mask to expose first portions of the semiconductor substrate;
- etching a central bottom portion of the thermal oxide layer to expose second portions of the semiconductor substrate;
- and
- etching the semiconductor substrate using the etched thermal oxide layer as a mask.
Dependencies are inferred from the claim text.