Manufacturing method of semiconductor substrate, thin film transistor and semiconductor device

A manufacturing method of a semiconductor substrate, comprising the steps of:

• irradiating one surface of a first single crystal semiconductor substrate with ions to form a first embrittlement layer at a predetermined depth from the surface of the first single crystal semiconductor substrate;
• providing a substrate having an insulating surface in order to superpose the first single crystal semiconductor substrate such that the one surface of the first single crystal semiconductor substrate is bonded to the insulating surface;
• separating the first single crystal semiconductor substrate from a single crystal semiconductor layer by thermal treatment, so that the single crystal semiconductor layer is left on the substrate having the insulating surface, wherein the thermal treatment is performed in a state that the first single crystal semiconductor substrate and the substrate having the insulating surface are bonded;
• etching the single crystal semiconductor layer to form a plurality of first element formation patterns;
• irradiating one surface of a second single crystal semiconductor substrate with ions to form a second embrittlement layer at a predetermined depth from the surface of the second single crystal semiconductor substrate;
• forming a plurality of second element formation patterns and a dummy pattern arranged between the plurality of second element formation patterns in the one surface of the second single crystal semiconductor substrate by etching, wherein the plurality of second element formation patterns and the dummy pattern are arranged at a predetermined interval;
• providing the substrate having the insulating surface on which the first element formation patterns are left in order to superpose the second single crystal semiconductor substrate such that the surface of the second single crystal semiconductor substrate, on which the second element formation patterns and the dummy pattern are formed, is bonded to the insulating surface, wherein said bonding is conducted so as not to overlap the first element formation patterns with the second element formation patterns or the dummy pattern;
• and
• separating the second single crystal semiconductor substrate from the plurality of second element formation patterns and the dummy pattern are left on the substrate having the insulating surface, wherein the thermal treatment is performed in a state that the second single crystal semiconductor substrate and the substrate having the insulating surface are bonded.

A manufacturing method of a semiconductor substrate, comprising the steps of:

• irradiating one surface of a first single crystal semiconductor substrate with ions to form a first embrittlement layer at a predetermined depth from the surface of the first single crystal semiconductor substrate;
• providing a substrate having an insulating surface in order to superpose the first single crystal semiconductor substrate such that the one surface of the first single crystal semiconductor substrate is bonded to the insulating surface;
• separating the first single crystal semiconductor substrate from a single crystal semiconductor layer by thermal treatment, so that the single crystal semiconductor layer is left on the substrate having the insulating surface, wherein the thermal treatment is performed in a state that the first single crystal semiconductor substrate and the substrate having the insulating surface are bonded;
• etching the single crystal semiconductor layer to form a plurality of first element formation patterns and a dummy pattern formed between the plurality of first element formation patterns, wherein the plurality of the first element formation patterns and the dummy patterns are arranged at a predetermined interval;
• irradiating one surface of a second single crystal semiconductor substrate with ions to form a second embrittlement layer at a predetermined depth from the surface of the second single crystal semiconductor substrate;
• forming a plurality of second element formation patterns in the one surface of the second single crystal semiconductor substrate by etching;
• providing the substrate having the insulating surface on which the first element formation patterns and the dummy pattern are left in order to superpose the second single crystal semiconductor substrate such that the surface of the second single crystal semiconductor substrate, on which the second element formation patterns are formed, is bonded to the insulating surface, wherein said bonding is conducted so as not to overlap the first element formation patterns or the dummy pattern with the second element formation patterns;
• and
• separating the second single crystal semiconductor substrate from the plurality of second element formation patterns are left on the substrate having the insulating surface, wherein the thermal treatment is performed in a state that the second single crystal semiconductor substrate and the substrate having the insulating surface are bonded.