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US 2008/0286941 A1Published application
Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.
Claims13
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second substrate;
- forming a semiconductor island by patterning the single crystal semiconductor film;
- and
- heating the semiconductor island in order to reduce defects in the semiconductor island.
4 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon wherein a thickness of the silicon oxide film is 0.05 to 0.5 μm;
- adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second substrate;
- forming a semiconductor island by patterning the single crystal semiconductor film;
- and
- thermally oxidizing a surface of the semiconductor island in an oxidizing atmosphere.
4 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon wherein a thickness of the silicon oxide film is 0.05 to 0.5 μm;
- adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second substrate;
- forming a semiconductor island by patterning the single crystal semiconductor film;
- and
- performing hydrogenation by a heat treatment on at least the semiconductor island.
4 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second substrate;
- forming a semiconductor island by patterning the single crystal semiconductor film;
- heating the semiconductor island in order to reduce defects in the semiconductor island;
- forming an interlayer insulating film over the semiconductor island;
- and
- performing hydrogenation by a heat treatment after forming the interlayer insulating film.
6 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second substrate;
- flattening the single crystal semiconductor film;
- forming a semiconductor island by patterning the single crystal semiconductor film;
- and
- thermally oxidizing a surface of the semiconductor island in an oxidizing atmosphere.
5 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a single crystal semiconductor film is formed over the second substrate;
- forming a semiconductor island by patterning the single crystal semiconductor film;
- and
- thermally oxidizing a surface of the semiconductor island in an oxidizing atmosphere to form an oxide film on the semiconductor island;
- forming a gate electrode over the semiconductor island with the oxide film interposed therebetween;
- forming side walls adjacent to side surfaces of the gate electrode wherein the semiconductor island extends beyond outer side edges of the side walls;
- forming a metal film on at least portions of the semiconductor island;
- heating the metal film to form first metal silicide layers in the portions of the semiconductor island.
8 more elements
Dependencies are inferred from the claim text.