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US 2008/0286932 A1Published application
Method of manufacturing semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorJong Won Sun
Life of this patent
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Abstract
A method of manufacturing a semiconductor device may include the steps of: forming a doped polysilicon film by implanting or incorporating dopant ions simultaneously with forming a silicon film; forming a doped polysilicon pattern by patterning the doped polysilicon film; forming a spacer on sides of the doped polysilicon pattern; and forming source and drain regions using the polysilicon pattern and the spacer as a mask.
Claims10
A method of manufacturing a semiconductor device comprising the steps of:
- forming a doped polysilicon film by depositing dopant ions simultaneously with a silicon film;
- forming a doped polysilicon pattern by patterning the doped polysilicon film;
- forming a spacer on sides of the doped polysilicon pattern;
- and
- forming source and drain regions using the polysilicon pattern and the spacer as a mask.
2 more elements
Dependencies are inferred from the claim text.