Coating material for photoresist pattern and method of forming fine pattern using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJoon-Seok Oh, Ju-Young Kim
Life of this patent
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Abstract
A coating material for a photoresist pattern includes a water-soluble polymer and an additive mixed with the water-soluble polymer. The additive may be at least one selected from the group represented by Formulas 1 and 2: wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R8 respectively represent one selected from an electron donating group consisting of an alkyl group and —H, and wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R7 respectively represent one selected from an electron donating group consisting of an alkyl group and —H.
Claims21
A coating material for a photoresist pattern comprising:
- a water-soluble polymer;
- and
- an additive mixed with the water-soluble polymer, the additive being at least one selected from the group represented by Formulas 1 and 2:
- wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R8 respectively represent one selected from an electron donating group consisting of an alkyl group and —H;
- and
- wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R7 respectively represent one selected from an electron donating group consisting of an alkyl group and —H.
A coating material for a photoresist pattern comprising:
- a water-soluble polymer;
- a cross-linking agent;
- an additive;
- and
- water, and wherein the water, the water-soluble polymer, the cross-linking agent and the additive are mixed together, the additive being at least one selected from the group represented by Formulas 1 and 2:
- wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R8 respectively represent one selected from an electron donating group consisting of an alkyl group and —H;
- and
- wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R7 respectively represent one selected from an electron donating group consisting of an alkyl group and —H.
A method of forming a fine pattern, comprising:
- preparing a coating material comprising a water-soluble polymer and an additive mixed with the water-soluble polymer;
- applying the coating material onto a substrate having photoresist patterns;
- and
- cross-linking the coating material and the photoresist patterns to form coating patterns on the photoresist patterns, the additive being at least one selected from the group represented by Formulas 1 and 2:
- wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R8 respectively represent one selected from an electron donating group consisting of an alkyl group and —H;
- and
- wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R7 respectively represent one selected from an electron donating group consisting of an alkyl group and —H.
Dependencies are inferred from the claim text.