Flash memory device and program method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Sung Park, Dong-Hun KWAK
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AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Sung Park, Dong-Hun KWAK
Estimating the term…
A method for programming a flash memory device comprising programming memory cells via repetition of program loops, a first of the program loops including a program execution interval and a verify read interval, a second of the program loops including the program execution interval, the verify read interval, and a judging interval. Also disclosed is a flash memory device comprising a memory cell array having memory cells arranged in rows and columns, a read/program circuit configured to perform program and read operations to the memory cell array, and a control logic circuit configured to control the read/program circuit so as to perform a judging operation according to a program loop number.
A flash memory device comprising:
A flash memory device comprising:
A memory card comprising:
Dependencies are inferred from the claim text.