Semiconductor device and driving method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHajime Kimura
Life of this patent
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Abstract
It is an object of the invention to provide a digital circuit which can operate normally regardless of binary potentials of an input signal. A semiconductor device having a correcting unit and a logic unit wherein the correcting unit includes a capacitor, first and second switches, wherein the first electrode of the capacitor is connected to the input terminal and the second electrode of the capacitor is connected to the gate of the transistor in the logic circuit, wherein the first switch controls the connection between a gate and drain of the transistor and the second switch controls the potential to be supplied to the drain of the transistor is provided.
Claims25
A semiconductor device comprising:
- a transistor;
- a capacitor element;
- a first switch;
- and
- a second switch,
- wherein a first electrode of the capacitor element is electrically connected to a gate of the transistor,
- wherein a first terminal of the first switch is electrically connected to the gate of the transistor, and a second terminal of the first switch is electrically connected to a drain of the transistor,
- wherein a first terminal of the second switch is electrically connected to the drain of the transistor, and
- wherein an area of the first electrode of the capacitor element is larger than an area of a channel region of the transistor.
A semiconductor device comprising:
- a transistor;
- a capacitor element;
- a first switch;
- a second switch;
- a third switch;
- and
- a fourth switch,
- wherein a first terminal of the first switch is electrically connected to a first electrode of the capacitor element,
- wherein a first terminal of the second switch is electrically connected to the first electrode of the capacitor element,
- wherein a second electrode of the capacitor element is electrically connected to a gate of the transistor,
- wherein a first terminal of the third switch is electrically connected to the gate of the transistor, and a second terminal of the third switch is electrically connected to a drain of the transistor,
- wherein a first terminal of the fourth switch is electrically connected to the drain of the transistor, and
- wherein an area of the first electrode of the capacitor element is larger than an area of a channel region of the transistor.
A semiconductor device comprising:
- a signal line;
- and
- a plurality of circuits, each of the plurality of circuits comprising a capacitor element, a transistor and a switch, wherein a first electrode of the capacitor element is electrically connected to the signal line, a second electrode of the capacitor element is electrically connected to a gate of the transistor and a first terminal of the switch, a second terminal of the switch is electrically connected to one of a source and a drain of the transistor, and the other of the source and the drain of the transistor is electrically connected to a wiring.
Dependencies are inferred from the claim text.