Thin film transistor and organic light emitting display using the same
AssigneeSamsung Mobile Display Co., Ltd.
InventorsJae-kyeong Jeong, Yeon-gon Mo, Jin-seong Park, Hyun-soo Shin, Hun-jung Lee, Jong-han Jeong
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Abstract
Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1014 to about 1×1018 cm−3.
Claims16
A thin film transistor, comprising:
- a substrate;
- a semiconductor layer on the substrate, the semiconductor layer comprising a P-type semiconductor layer comprising a zinc oxide semiconductor and phosphorus diffused in the zinc oxide semiconductor, wherein the phosphorus is diffused in the zinc oxide semiconductor to a concentration ranging from about 1×1014 to about 1×1018 cm−3;
- a gate electrode on the substrate;
- and
- source/drain electrodes on the substrate.
A method of manufacturing a thin film transistor, comprising:
- patterning a gate electrode on a substrate;
- forming a gate insulating layer on the gate electrode;
- forming a semiconductor layer on the gate insulating layer, the semiconductor layer comprising a zinc oxide semiconductor;
- diffusing a phosphorus compound in the semiconductor layer to form a P-type semiconductor layer;
- and
- forming source/drain electrodes on the P-type semiconductor layer.
A method of manufacturing a thin film transistor, comprising:
- forming a semiconductor layer comprising source/drain regions and a channel region on a substrate, the semiconductor layer comprising a zinc oxide semiconductor;
- diffusing a phosphorus compound in the semiconductor layer to form a P-type semiconductor layer;
- forming a gate insulating layer on the semiconductor layer;
- forming a gate electrode on the gate insulating layer in a region corresponding to the channel region of the semiconductor layer;
- forming an interlayer insulation layer on the gate electrode;
- and
- electrically coupling source/drain electrodes to the semiconductor layer through contact holes in the gate insulating layer and the interlayer insulation layer.
An organic light emitting display, comprising:
- a thin film transistor comprising:
- a substrate,
- a semiconductor layer comprising a P-type semiconductor layer comprising a zinc oxide semiconductor and phosphorus diffused in the zinc oxide semiconductor, wherein the phosphorus is diffused in the zinc oxide semiconductor to a concentration ranging from about 1×1014to about 1×1018 cm−3,
- a gate electrode, and
- source/drain electrodes on the substrate;
- and
- an organic light emitting diode electrically coupled to the thin film transistor.
Dependencies are inferred from the claim text.