Semiconductor quantum cascade laser and systems and methods for manufacturing the same
OwnerMariano Troccoli, Gloria Emilia Hoflerinventors
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Abstract
A bipolar quantum cascade (QC) laser includes a p-n junction disposed adjacent to an active/injection region of semiconductor layers. Systems that make use of such QC lasers and methods for manufacturing such QC lasers are also described.
Claims20
A quantum cascade laser, comprising:
- a first stack of semiconductor layers of a first conductivity type,
- an active core of semiconductor layers, and
- a base between the first stack and the active core, the base containing at least one layer of a second conductivity type.
A laser, comprising a plurality of active/injection regions of a first conductivity type, each active/injection region including two or more coupled quantum wells having at least a second and third energy level for charge carriers of the first conductivity type, the third energy level being higher in energy than the second energy level;
- and a plurality of base layers of a second conductivity type each of the base layers separating respective pairs of the active/injection regions from one another.
A sensing system, comprising an optical engine having at least one quantum cascade laser that includes a first stack of semiconductor layers of a first conductivity type, an active/injection region of semiconductor layers, and a base region between the first stack of semiconductor layers and the active/injection region, the base region containing at least one layer of a second conductivity type;
- a cell configured to contain a test sample;
- and a detection assembly configured to measure, responsive to irradiation of the test sample with light from the QC laser, changes in at least one of optical transmission, absorption, or reflection of the test sample, or an intrinsic or extrinsic physical parameter of the test sample.
A quantum cascade laser, comprising a p-n junction disposed adjacent to an active/Injection region of semi conductor layers.
A method for manufacturing a quantum cascade laser, comprising:
- forming a first stack of semiconductor layers of a first conductivity type;
- forming a base region above the first stack of a second conductivity type;
- and
- forming an active/injection region above the base region.
Dependencies are inferred from the claim text.