Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Computer Program Product

A circuit comprising a plurality of resistivity changing means for changing its resistivity,

• wherein at least two resistance ranges are assigned to each resistivity changing means, each resistance range defining a possible state of the resistivity changing means, and
• wherein the circuit means is operable in a resistivity changing means initializing mode in which initializing signals are applied to the plurality of resistivity changing means, strengths and durations of the initializing signals being chosen such that the resistance of each resistivity changing means is shifted into one of the resistance ranges assigned to the resistivity changing means.

A memory module comprising at least one integrated circuit comprising a plurality of resistivity changing cells,

• wherein at least two resistance ranges are assigned to each resistivity changing cell, each resistance range defining a possible state of the resistivity changing cell, and
• wherein the integrated circuit is operable in a cell initializing mode in which initializing signals are applied to the cells, strengths and durations of the initializing signals being chosen such that the resistance of each resistivity changing cell is shifted into one of the resistance ranges assigned to the resistivity changing cell.

A method of operating an integrated circuit comprising a plurality of resistivity changing cells, the method comprising:

• assigning at least two resistance ranges to each resistivity changing cell, each resistance range defining a possible state of the resistivity changing cell;
• and
• applying initializing signals to the resistivity changing cells, strengths and durations of the initializing signals being chosen such that the resistance of each resistivity changing cell is shifted into one of the resistance ranges assigned to the resistivity changing cell.

A method of operating a plurality of resistivity changing memory cells, the method comprising assigning at least two resistance ranges to each resistivity changing cell, each resistance range defining a possible state of the resistivity changing cell;

• and
• applying initializing signals to the cells, strengths and durations of the initializing signals being chosen such that the resistance of each resistivity changing cell is shifted into one of the resistance ranges assigned to the resistivity changing cell.

A computer program product configured to perform, when being carried out on a computing device, a method of operating an integrated circuit comprising a plurality of resistivity changing cells, the method comprising:

• assigning at least two resistance ranges to each resistivity changing cell, each resistance range defining a possible state of the resistivity changing cell;
• and
• applying initializing signals to the resistivity changing cells, strengths and durations of the initializing signals being chosen such that the resistance of each resistivity changing cell is shifted into one of the resistance ranges assigned to the resistivity changing cell.