EUV diffractive optical element for semiconductor wafer lithography and method for making same
AssigneeAdvanced Micro Devices, Inc.
InventorsBruno M. LaFontaine, Ryoung-Han Kim, Jongwook Kye
Life of this patent
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Abstract
According to one exemplary embodiment, an EUV (extreme ultraviolet) optical element in a light path between an EUV light source and a semiconductor wafer includes a reflective film having a number of bilayers. The reflective film includes a pattern, where the pattern causes a change in incident EUV light from the EUV light source, thereby controlling illumination at a pupil plane of an EUV projection optic to form a printed field on the semiconductor wafer. The EUV optical element can be utilized in an EUV lithographic process to fabricate a semiconductor die.
Claims20
An EUV (extreme ultraviolet) diffractive optical element in a light path between an EUV light source and a semiconductor wafer, said EUV diffractive optical element comprising:
- a reflective film having a plurality of bilayers;
- said reflective film including a pattern;
- said pattern causing a change in incident EUV light from said EUV light source, thereby controlling illumination at a pupil plane of an EUV projection optic to form a printed field on said semiconductor wafer.
An EUV (extreme ultraviolet) diffractive optical element in a light path between an EUV light source and a semiconductor wafer, said EUV diffractive optical element comprising:
- a transmissive film including a pattern;
- said pattern diffracting incident EUV light and generating a controlled illumination pattern at a pupil plane of an EUV projection optic to form a printed image on said semiconductor wafer.
A semiconductor die fabricated by utilizing an EUV diffractive optical element positioned in a light path between an EUV light source and a semiconductor wafer, said EUV diffractive optical element comprising:
- a reflective film having a plurality of bilayers;
- said reflective film including a pattern;
- said pattern causing a change in incident EUV light from said EUV light source, thereby controlling illumination at a pupil plane of an EUV projection optic to form a printed field on said semiconductor wafer.
Dependencies are inferred from the claim text.