Measurement method, exposure method and device manufacturing method

Abstract

An image (a latent image) of an aperture pattern that includes an L/S pattern having a linewidth (a space width A) that exceeds the measurement resolution of a measurement device is generated in each of divided areas on a wafer via an optical system (step 410). Next, a part of each of the divided areas on the wafer where the image of the aperture pattern is generated is respectively exposed via a projection optical system, and an image of the aperture pattern after removal of a part of the image of the L/S pattern is formed in each of the divided areas (step 412). With this operation, an image (a resist image) of the pattern that is obtained by removing a part of the pattern is formed in each of the divided areas after the wafer is developed. Then, measurement is performed by a simple measurement device using the wafer as a sample, and the optical characteristics of the projection optical system (such as a best focus position, field of curvature, or astigmatism) are obtained (step 426). Accordingly, the simple measurement device can measure the optical characteristics of the optical system with high accuracy in a short period of time.

Dependencies are inferred from the claim text.