Semiconductor device and manufacturing method of the same

A semiconductor device comprising:

• a first wiring layer disposed on a semiconductor substrate;
• a first insulating layer disposed on the first wiring layer and having a plurality of first openings formed therein;
• a barrier metal film comprising titanium, covering bottoms and sidewalls of the first openings and covering a top portion of the first insulating layer;
• a plurality of first metal layers comprising tungsten and embedded in corresponding first openings covered by the barrier metal film;
• a second metal layer comprising aluminum and in contact with the first metal layers embedded in the first openings and in contact with the barrier metal layer disposed on the top portion of the first insulating layer;
• a second insulating layer disposed on the second metal layer and the first insulating layer and having a second opening formed therein, the second opening covering the first openings;
• a third metal layer comprising chromium disposed in the second opening so as to be in contact with the second metal layer;
• and
• a fourth metal layer comprising copper and in contact with the third metal layer in the second opening.

A method of manufacturing a semiconductor device, comprising:

• forming a first wiring layer on a semiconductor substrate;
• forming a first insulating layer on the semiconductor substrate so as to cover the first wiring layer;
• forming a first opening in the first insulating layer so as to expose a portion of the first wiring layer;
• forming a first metal layer in the first opening so as to be connected to the exposed portion of the first wiring layer;
• forming a second wiring layer on the first insulating layer and on the first metal layer;
• forming a second insulating layer on the first insulating layer so as to cover the second wiring layer;
• forming a second opening in the second insulating layer so as to expose a portion of the second wiring layer;
• and
• forming a third wiring layer so as to be connected to the exposed portion of the second wiring layer through the second opening.

A method of manufacturing a semiconductor device, comprising:

• providing a wafer comprising a first wiring layer formed thereon, a first insulating layer formed on the first wiring layer and having a first opening, a first metal layer embedded in the first opening so as to be connected to the first wiring layer, a second wiring layer disposed on the first insulating layer so as to be connected to the first metal layer;
• forming a second insulating layer so as to cover the second wiring layer;
• forming a second opening in the second insulating layer so as to expose a portion of the second wiring layer;
• and
• forming a third wiring layer so as to be connected to the exposed portion of the second wiring layer.