Method of Producing Semiconductor Device and Semiconductor Device

A method of producing a semiconductor device comprising the steps of attaching a first supporting body to the front side of the substrate, thinning the substrate from its back side, removing the first supporting body from the substrate, attaching a second supporting body having an opening to the backside of the substrate, forming a first insulating film on the front side of the substrate, forming a through hole communicating with the opening of the second supporting body in the substrate, forming a second insulating film within the through hole of the substrate, and filling a conductor into the through hole of the substrate.

A method of producing a semiconductor device comprising the steps of attaching a first supporting body to the front side of the substrate, thinning the substrate from its back side, removing the first supporting body from the substrate, attaching a second supporting body having an opening larger than a through hole to be formed in the substrate to the backside of the substrate, forming a first insulating film on the front side of the substrate, forming a through hole communicating with the opening of the second supporting body in the substrate, forming a groove on the backside of the substrate, forming a second insulating film within the groove and the through hole of the substrate, and filling a conductor into the groove and the through hole of the substrate.

A method of producing a semiconductor device comprising the steps of attaching a first supporting body to the front side of the substrate, thinning the substrate from its back side, removing the first supporting body from the substrate, attaching a second supporting body having an opening to the backside of the substrate, forming a through hole communicating with the opening of the second supporting body in the substrate, forming an insulating film on the front side of the substrate and within the through hole, and filling a conductor into the through hole of the substrate.

A semiconductor device comprising a circuit component portion formed on the front side of a substrate, a through hole piercing the substrate and the circuit component portion, an insulating film formed on the side face of the through hole in the substrate and the circuit component portion as well as on the front side of the circuit component portion, a conductor filled into the through hole, and a conductive layer extending from the backside of the substrate to the front side of the circuit component portion, wherein the conductive layer and the insulating film formed on the side face of the through hole protrude from the backside of the substrate.

A semiconductor device comprising a circuit component portion formed on the front side of a substrate, a through hole piercing the substrate and the circuit component portion a groove formed on the backside of the substrate, the groove communicating with the through hole, an insulating film formed on the side face of the through hole in the substrate and the circuit component portion, on the front side of the circuit component portion and on the inner face of the groove, a conductor filled into the through hole and the groove, and a conductive layer extending from the backside of the substrate to the front side of the circuit component portion, and a groove wiring formed on the backside of the substrate.