Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device comprising:

• forming an insulating film area containing metal, germanium, and oxygen, on a Ge semiconductor area, the Ge semiconductor area being a Ge substrate, or a Ge on insulator;
• and
• thermally treating the insulating film area to reduce a film thickness of a part of the insulating film area to at most 0.5 nm, the part being located between the insulating film area and the Ge semiconductor area and having metal content smaller than a bulk concentration in the insulating film area.

(canceled)

16-20. (canceled)

A semiconductor device, comprising:

• a Ge semiconductor area which is a Ge substrate or a Ge on insulator;
• and
• an insulating film area formed in direct contact with the Ge semiconductor area and containing metal, germanium, oxygen, and nitrogen, the insulating film area being amorphous.

A semiconductor device, comprising:

• a Ge semiconductor area which is a Ge substrate, or a Ge on insulator;
• and
• an insulating film area formed in direct contact with the Ge semiconductor area and containing metal, germanium, oxygen, and nitrogen, the metal being at least one selected from a group consisting of Al, Ba, Ce, Gd, Hf, La, Mg, Pb, Pr, Sc, St, Ta, Ti, Y, and Zr.